Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Masaki Takahashi; Zhongchao Sun; Jannick Kjær Jørgensen; Szymon Beczkowski; Stig Munk-Nielsen; Asger Bjørn Jørgensen

doi:10.23919/EPE23ECCEEurope58414.2023.10264610

Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Masaki Takahashi^*, Zhongchao Sun, Jannick Kjær Jørgensen, Szymon Beczkowski, Stig Munk-Nielsen, Asger Bjørn Jørgensen

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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Abstract

Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.

Original language	English
Title of host publication	2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages	8
Publisher	IEEE
Publication date	2 Oct 2023
Article number	10264610
ISBN (Electronic)	9789075815412
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264610
Publication status	Published - 2 Oct 2023
Event	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023

Conference

Conference	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/Territory	Denmark
City	Aalborg
Period	04/09/2023 → 08/09/2023

Keywords

Finite-element method
Medium voltage
Modeling
SiC MOSFET
Thermal behavior

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10.23919/EPE23ECCEEurope58414.2023.10264610Licence: Other

EPE2023_masakitakahashiAccepted author manuscript, 1.73 MB

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Cite this

@inproceedings{d26025d9b9d741f7b436916acf514b4a,

title = "Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area",

abstract = "Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.",

keywords = "Finite-element method, Medium voltage, Modeling, SiC MOSFET, Thermal behavior",

author = "Masaki Takahashi and Zhongchao Sun and J{\o}rgensen, {Jannick Kj{\ae}r} and Szymon Beczkowski and Stig Munk-Nielsen and J{\o}rgensen, {Asger Bj{\o}rn}",

year = "2023",

month = oct,

day = "2",

doi = "10.23919/EPE23ECCEEurope58414.2023.10264610",

language = "English",

booktitle = "2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe",

publisher = "IEEE",

address = "United States",

note = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) ; Conference date: 04-09-2023 Through 08-09-2023",

}

Takahashi, M , Sun, Z , Jørgensen, JK , Beczkowski, S , Munk-Nielsen, S & Jørgensen, AB 2023, Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area. in 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe., 10264610, IEEE, 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, 04/09/2023. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264610

Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area. / Takahashi, Masaki ; Sun, Zhongchao ; Jørgensen, Jannick Kjær et al.
2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE, 2023. 10264610.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

AU - Takahashi, Masaki

AU - Sun, Zhongchao

AU - Jørgensen, Jannick Kjær

AU - Beczkowski, Szymon

AU - Munk-Nielsen, Stig

AU - Jørgensen, Asger Bjørn

PY - 2023/10/2

Y1 - 2023/10/2

N2 - Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.

AB - Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.

KW - Finite-element method

KW - Medium voltage

KW - Modeling

KW - SiC MOSFET

KW - Thermal behavior

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U2 - 10.23919/EPE23ECCEEurope58414.2023.10264610

DO - 10.23919/EPE23ECCEEurope58414.2023.10264610

M3 - Article in proceeding

BT - 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

PB - IEEE

T2 - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

Y2 - 4 September 2023 through 8 September 2023

ER -

Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Abstract

Conference

Keywords

Access to Document

AUB Link

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Developing the Novel Reliability Design Method with 3D-simulation of SiC Power Module

CoDE: Center of Digitalized Electronics (CoDE)

Cite this

Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

Developing the Novel Reliability Design Method with 3D-simulation of SiC Power Module

CoDE: Center of Digitalized Electronics (CoDE)

Cite this