TY - JOUR
T1 - Optimization and characterization of Au cuboid nanostructures as a SERS device for sensing applications
AU - Chirumamilla, M.
AU - Das, G.
AU - Toma, A.
AU - Gopalakrishnan, A.
AU - Zaccaria, R. Proietti
AU - Liberale, C.
AU - De Angelis, F.
AU - Di Fabrizio, E.
PY - 2012/9
Y1 - 2012/9
N2 - Gold cuboid nanostructures with edge size in the range of 40-65 nm and inter-particle separation of 20 nm were fabricated by electron beam lithography. The aim of the present work is to investigate the effect of cuboid size on surface enhanced Raman scattering intensity and, thereby, to optimize the size of nanostructures in order to maximize signal enhancement. The electric field distribution of 4 × 4 array of Au cuboid nanostructures was numerically simulated by commercial software. A monolayer of Rhodamine-6G is deposited on the device using chemisorption technique, finding an enhancement factor ∼10 4, which candidates the cuboid nanostructures as a promising enhanced Raman substrate.
AB - Gold cuboid nanostructures with edge size in the range of 40-65 nm and inter-particle separation of 20 nm were fabricated by electron beam lithography. The aim of the present work is to investigate the effect of cuboid size on surface enhanced Raman scattering intensity and, thereby, to optimize the size of nanostructures in order to maximize signal enhancement. The electric field distribution of 4 × 4 array of Au cuboid nanostructures was numerically simulated by commercial software. A monolayer of Rhodamine-6G is deposited on the device using chemisorption technique, finding an enhancement factor ∼10 4, which candidates the cuboid nanostructures as a promising enhanced Raman substrate.
KW - Biosensor
KW - Cuboid nanostructures
KW - Electron beam lithography
KW - Plasmonics
KW - SERS
UR - http://www.scopus.com/inward/record.url?scp=84865520299&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2012.05.004
DO - 10.1016/j.mee.2012.05.004
M3 - Journal article
AN - SCOPUS:84865520299
SN - 0167-9317
VL - 97
SP - 189
EP - 192
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -