A Compact P⁺ Contact Resistance Model for Characterization of Substrate Coupling in Modern Lightly Doped CMOS Processes

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Abstract

Compact modeling of P+ contact resistances is
important for characterization of substrate noise coupling in
mixed-signal System on Chips (SoCs). Existing contact resistance
models can handle uniformly doped bulk or epitaxial substrates.
However, compact contact resistance models feasible for modern
lightly-doped CMOS processes with P-well layers are still unavailable.
This paper presents a new compact resistance model aiming
at solving this problem. A Conformal Mapping(CM) method was
used to derive the closed-form expressions for the resistances in
the model. The model requires no fitting factors, and it is scalable
to layout/substrate parameters. The proposed model can also be
used to predict noise coupling in terms of S-parameters. The
model validation has been done by both EM simulations and
measurements, and satisfactory agreement is found between the
modeled and measured resistances as well as S-parameters.
Original languageEnglish
Title of host publicationEuropean Microwave Week 2012 Conference Proceedings
PublisherEuMA
Publication date2012
ISBN (Electronic)978-2-87487-028-6
Publication statusPublished - 2012
EventEuropean Microwave Integrated Circuits Conference 2012 - Amsterdam, Netherlands
Duration: 29 Oct 201230 Oct 2012

Conference

ConferenceEuropean Microwave Integrated Circuits Conference 2012
CountryNetherlands
CityAmsterdam
Period29/10/201230/10/2012

Fingerprint

Contact resistance
Substrates
Scattering parameters
Conformal mapping
Signal systems

Cite this

@inproceedings{d2a6ff9f2e7543558654780657cddf3d,
title = "A Compact P⁺ Contact Resistance Model for Characterization of Substrate Coupling in Modern Lightly Doped CMOS Processes",
abstract = "Compact modeling of P+ contact resistances is important for characterization of substrate noise coupling in mixed-signal System on Chips (SoCs). Existing contact resistance models can handle uniformly doped bulk or epitaxial substrates. However, compact contact resistance models feasible for modern lightly-doped CMOS processes with P-well layers are still unavailable. This paper presents a new compact resistance model aiming at solving this problem. A Conformal Mapping(CM) method was used to derive the closed-form expressions for the resistances in the model. The model requires no fitting factors, and it is scalable to layout/substrate parameters. The proposed model can also be used to predict noise coupling in terms of S-parameters. The model validation has been done by both EM simulations and measurements, and satisfactory agreement is found between the modeled and measured resistances as well as S-parameters.",
author = "Ming Shen and Mikkelsen, {Jan H.} and Jensen, {Ole Kiel} and Torben Larsen",
year = "2012",
language = "English",
booktitle = "European Microwave Week 2012 Conference Proceedings",
publisher = "EuMA",

}

Shen, M, Mikkelsen, JH, Jensen, OK & Larsen, T 2012, A Compact P⁺ Contact Resistance Model for Characterization of Substrate Coupling in Modern Lightly Doped CMOS Processes. in European Microwave Week 2012 Conference Proceedings. EuMA, European Microwave Integrated Circuits Conference 2012, Amsterdam, Netherlands, 29/10/2012.

A Compact P⁺ Contact Resistance Model for Characterization of Substrate Coupling in Modern Lightly Doped CMOS Processes. / Shen, Ming; Mikkelsen, Jan H.; Jensen, Ole Kiel; Larsen, Torben.

European Microwave Week 2012 Conference Proceedings. EuMA, 2012.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

TY - GEN

T1 - A Compact P⁺ Contact Resistance Model for Characterization of Substrate Coupling in Modern Lightly Doped CMOS Processes

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AU - Larsen, Torben

PY - 2012

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N2 - Compact modeling of P+ contact resistances is important for characterization of substrate noise coupling in mixed-signal System on Chips (SoCs). Existing contact resistance models can handle uniformly doped bulk or epitaxial substrates. However, compact contact resistance models feasible for modern lightly-doped CMOS processes with P-well layers are still unavailable. This paper presents a new compact resistance model aiming at solving this problem. A Conformal Mapping(CM) method was used to derive the closed-form expressions for the resistances in the model. The model requires no fitting factors, and it is scalable to layout/substrate parameters. The proposed model can also be used to predict noise coupling in terms of S-parameters. The model validation has been done by both EM simulations and measurements, and satisfactory agreement is found between the modeled and measured resistances as well as S-parameters.

AB - Compact modeling of P+ contact resistances is important for characterization of substrate noise coupling in mixed-signal System on Chips (SoCs). Existing contact resistance models can handle uniformly doped bulk or epitaxial substrates. However, compact contact resistance models feasible for modern lightly-doped CMOS processes with P-well layers are still unavailable. This paper presents a new compact resistance model aiming at solving this problem. A Conformal Mapping(CM) method was used to derive the closed-form expressions for the resistances in the model. The model requires no fitting factors, and it is scalable to layout/substrate parameters. The proposed model can also be used to predict noise coupling in terms of S-parameters. The model validation has been done by both EM simulations and measurements, and satisfactory agreement is found between the modeled and measured resistances as well as S-parameters.

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