A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

G. Busatto; D. Bisello; G. Curr; P. Giubilato; F. Iannuzzo; S. Mattiazzo; D. Pantano; A. Sanseverino; L. Silvestrin; M. Tessaro; F. Velardi; J. Wyss

doi:10.1016/j.microrel.2011.07.023

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

G. Busatto, D. Bisello, G. Curr, P. Giubilato, F. Iannuzzo^*, S. Mattiazzo, D. Pantano, A. Sanseverino, L. Silvestrin, M. Tessaro, F. Velardi, J. Wyss

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

5 Citations (Scopus)

Abstract

A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200 V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.

Original language	English
Journal	Microelectronics Reliability
Volume	51
Issue number	9-11
Pages (from-to)	1995-1998
Number of pages	4
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2011.07.023
Publication status	Published - 1 Sept 2011
Externally published	Yes

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title = "A new test methodology for an exhaustive study of single-event-effects on power MOSFETs",

abstract = "A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200 V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.",

author = "G. Busatto and D. Bisello and G. Curr and P. Giubilato and F. Iannuzzo and S. Mattiazzo and D. Pantano and A. Sanseverino and L. Silvestrin and M. Tessaro and F. Velardi and J. Wyss",

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T1 - A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

AU - Busatto, G.

AU - Bisello, D.

AU - Curr, G.

AU - Giubilato, P.

AU - Iannuzzo, F.

AU - Mattiazzo, S.

AU - Pantano, D.

AU - Sanseverino, A.

AU - Silvestrin, L.

AU - Tessaro, M.

AU - Velardi, F.

AU - Wyss, J.

PY - 2011/9/1

Y1 - 2011/9/1

N2 - A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200 V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.

AB - A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200 V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.

UR - http://www.scopus.com/inward/record.url?scp=80052927438&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2011.07.023

DO - 10.1016/j.microrel.2011.07.023

M3 - Journal article

AN - SCOPUS:80052927438

SN - 0026-2714

VL - 51

SP - 1995

EP - 1998

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11

ER -

A new test methodology for an exhaustive study of single-event-effects on power MOSFETs

Abstract

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