Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

Rui Wu; Liudmila Smirnova; Huai Wang; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/ICPE.2015.7167881

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

Rui Wu, Liudmila Smirnova, Huai Wang, Francesco Iannuzzo, Frede Blaabjerg

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

39 Citations (Scopus)

1097 Downloads (Pure)

Abstract

With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

Original language	English
Title of host publication	Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)
Number of pages	7
Publisher	IEEE Press
Publication date	Jun 2015
Pages	850 - 856
Article number	7167881
ISBN (Print)	978-895708254-6
DOIs	https://doi.org/10.1109/ICPE.2015.7167881
Publication status	Published - Jun 2015
Event	9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015) - Seoul, Korea, Republic of Duration: 1 Jun 2015 → 5 Jun 2015

Conference

Conference	9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)
Country/Territory	Korea, Republic of
City	Seoul
Period	01/06/2015 → 05/06/2015

Keywords

Insulated-Gate Bipolar Transistor (IGBT)
Power Modules
Current Imbalance
Finite Element Method

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10.1109/ICPE.2015.7167881

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power ModulesSubmitted manuscript, 253 KB

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Wu, R., Smirnova, L., Wang, H., Iannuzzo, F., & Blaabjerg, F. (2015). Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules. In Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) (pp. 850 - 856 ). Article 7167881 IEEE Press. https://doi.org/10.1109/ICPE.2015.7167881

@inproceedings{baac7f3a6a3c4669821e4e0efa43352f,

title = "Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules",

abstract = "With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.",

keywords = "Insulated-Gate Bipolar Transistor (IGBT), Power Modules, Current Imbalance, Finite Element Method",

author = "Rui Wu and Liudmila Smirnova and Huai Wang and Francesco Iannuzzo and Frede Blaabjerg",

year = "2015",

month = jun,

doi = "10.1109/ICPE.2015.7167881",

language = "English",

isbn = "978-895708254-6",

pages = "850 -- 856 ",

booktitle = "Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)",

publisher = "IEEE Press",

note = "9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015) ; Conference date: 01-06-2015 Through 05-06-2015",

}

Wu, R, Smirnova, L, Wang, H , Iannuzzo, F & Blaabjerg, F 2015, Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules. in Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)., 7167881, IEEE Press, pp. 850 - 856 , 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015), Seoul, Korea, Republic of, 01/06/2015. https://doi.org/10.1109/ICPE.2015.7167881

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules. / Wu, Rui; Smirnova, Liudmila; Wang, Huai et al.
Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia). IEEE Press, 2015. p. 850 - 856 7167881.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

AU - Wu, Rui

AU - Smirnova, Liudmila

AU - Wang, Huai

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2015/6

Y1 - 2015/6

N2 - With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

AB - With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

KW - Insulated-Gate Bipolar Transistor (IGBT)

KW - Power Modules

KW - Current Imbalance

KW - Finite Element Method

U2 - 10.1109/ICPE.2015.7167881

DO - 10.1109/ICPE.2015.7167881

M3 - Article in proceeding

SN - 978-895708254-6

SP - 850

EP - 856

BT - Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

PB - IEEE Press

T2 - 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)

Y2 - 1 June 2015 through 5 June 2015

ER -

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

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