Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

Rui Wu; Liudmila Smirnova; Huai Wang; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/ICPE.2015.7167881

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

Rui Wu, Liudmila Smirnova, Huai Wang, Francesco Iannuzzo, Frede Blaabjerg

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Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

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Abstract

With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

Originalsprog	Engelsk
Titel	Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)
Antal sider	7
Forlag	IEEE Press
Publikationsdato	jun. 2015
Sider	850 - 856
Artikelnummer	7167881
ISBN (Trykt)	978-895708254-6
DOI	https://doi.org/10.1109/ICPE.2015.7167881
Status	Udgivet - jun. 2015
Begivenhed	9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015) - Seoul, Sydkorea Varighed: 1 jun. 2015 → 5 jun. 2015

Konference

Konference	9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)
Land/Område	Sydkorea
By	Seoul
Periode	01/06/2015 → 05/06/2015

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10.1109/ICPE.2015.7167881

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Citationsformater

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title = "Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules",

abstract = "With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.",

keywords = "Insulated-Gate Bipolar Transistor (IGBT), Power Modules, Current Imbalance, Finite Element Method",

author = "Rui Wu and Liudmila Smirnova and Huai Wang and Francesco Iannuzzo and Frede Blaabjerg",

year = "2015",

month = jun,

doi = "10.1109/ICPE.2015.7167881",

language = "English",

isbn = "978-895708254-6",

pages = "850 -- 856 ",

booktitle = "Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)",

publisher = "IEEE Press",

note = "9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015) ; Conference date: 01-06-2015 Through 05-06-2015",

}

Wu, R, Smirnova, L, Wang, H , Iannuzzo, F & Blaabjerg, F 2015, Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules. i Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)., 7167881, IEEE Press, s. 850 - 856 , 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015), Seoul, Sydkorea, 01/06/2015. https://doi.org/10.1109/ICPE.2015.7167881

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules. / Wu, Rui; Smirnova, Liudmila; Wang, Huai et al.
Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia). IEEE Press, 2015. s. 850 - 856 7167881.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

AU - Wu, Rui

AU - Smirnova, Liudmila

AU - Wang, Huai

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2015/6

Y1 - 2015/6

N2 - With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

AB - With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

KW - Insulated-Gate Bipolar Transistor (IGBT)

KW - Power Modules

KW - Current Imbalance

KW - Finite Element Method

U2 - 10.1109/ICPE.2015.7167881

DO - 10.1109/ICPE.2015.7167881

M3 - Article in proceeding

SN - 978-895708254-6

SP - 850

EP - 856

BT - Proceedings of the 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

PB - IEEE Press

T2 - 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)

Y2 - 1 June 2015 through 5 June 2015

ER -

Comprehensive Investigation on Current Imbalance among Parallel Chips inside MW-Scale IGBT Power Modules

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