Wire bond degradation under thermo- and pure mechanical loading

Kristian Bonderup Pedersen, Dennis Achton Nielsen, Bernhard Czerny, Golta Khatibi, Francesco Iannuzzo, Vladimir Popok, Kjeld Pedersen

Research output: Contribution to journalConference article in JournalResearchpeer-review

4 Citations (Scopus)

Abstract

This paper presents a fundamental study on degradation of heavy Al bond wires typically used in high power modules. Customized samples are designed to only consist of Al bond wires on standard Si diodes. These samples are subjected to pure mechanical and passive thermal cycling to investigate the bond degradation
behavior on a simple system as well as compare these two test methods. Although an appreciable difference in fracture behavior is observed between these two methods, both provide correlation between the number of cycles and degree of degradation, especially in the case of the passive thermal test. To enable investigation of degradation rate a large number of bond interfaces is analyzed and they are found to follow conventional accepted fracture laws like Paris-Erdogan. With additional work this could enable the possibility of obtaining empirical parameters to be used in actual physics based lifetime laws.
Original languageEnglish
JournalMicroelectronics Reliability
Volume76-77
Pages (from-to)373-377
Number of pages5
ISSN0026-2714
DOIs
Publication statusPublished - Jul 2017
Event28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, France
Duration: 25 Sep 201728 Sep 2017

Conference

Conference28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
CountryFrance
CityBordeaux
Period25/09/201728/09/2017

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wire
Wire
degradation
Degradation
cycles
Thermal cycling
Diodes
Physics
diodes
life (durability)
physics
Hot Temperature

Cite this

Pedersen, Kristian Bonderup ; Nielsen, Dennis Achton ; Czerny, Bernhard ; Khatibi, Golta ; Iannuzzo, Francesco ; Popok, Vladimir ; Pedersen, Kjeld. / Wire bond degradation under thermo- and pure mechanical loading. In: Microelectronics Reliability. 2017 ; Vol. 76-77. pp. 373-377.
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title = "Wire bond degradation under thermo- and pure mechanical loading",
abstract = "This paper presents a fundamental study on degradation of heavy Al bond wires typically used in high power modules. Customized samples are designed to only consist of Al bond wires on standard Si diodes. These samples are subjected to pure mechanical and passive thermal cycling to investigate the bond degradationbehavior on a simple system as well as compare these two test methods. Although an appreciable difference in fracture behavior is observed between these two methods, both provide correlation between the number of cycles and degree of degradation, especially in the case of the passive thermal test. To enable investigation of degradation rate a large number of bond interfaces is analyzed and they are found to follow conventional accepted fracture laws like Paris-Erdogan. With additional work this could enable the possibility of obtaining empirical parameters to be used in actual physics based lifetime laws.",
author = "Pedersen, {Kristian Bonderup} and Nielsen, {Dennis Achton} and Bernhard Czerny and Golta Khatibi and Francesco Iannuzzo and Vladimir Popok and Kjeld Pedersen",
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Wire bond degradation under thermo- and pure mechanical loading. / Pedersen, Kristian Bonderup; Nielsen, Dennis Achton; Czerny, Bernhard; Khatibi, Golta ; Iannuzzo, Francesco; Popok, Vladimir; Pedersen, Kjeld.

In: Microelectronics Reliability, Vol. 76-77, 07.2017, p. 373-377.

Research output: Contribution to journalConference article in JournalResearchpeer-review

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T1 - Wire bond degradation under thermo- and pure mechanical loading

AU - Pedersen, Kristian Bonderup

AU - Nielsen, Dennis Achton

AU - Czerny, Bernhard

AU - Khatibi, Golta

AU - Iannuzzo, Francesco

AU - Popok, Vladimir

AU - Pedersen, Kjeld

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AB - This paper presents a fundamental study on degradation of heavy Al bond wires typically used in high power modules. Customized samples are designed to only consist of Al bond wires on standard Si diodes. These samples are subjected to pure mechanical and passive thermal cycling to investigate the bond degradationbehavior on a simple system as well as compare these two test methods. Although an appreciable difference in fracture behavior is observed between these two methods, both provide correlation between the number of cycles and degree of degradation, especially in the case of the passive thermal test. To enable investigation of degradation rate a large number of bond interfaces is analyzed and they are found to follow conventional accepted fracture laws like Paris-Erdogan. With additional work this could enable the possibility of obtaining empirical parameters to be used in actual physics based lifetime laws.

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