Engineering
Modules
100%
Short Circuit
45%
Temperature
38%
Insulated Gate Bipolar Transistor
38%
Electric Potential
36%
Reliability
35%
Junction Temperature
33%
Models
32%
Simulation
23%
Applications
23%
Power Electronics
20%
Failure (Mechanical)
20%
Networks (Circuits)
17%
Performance
17%
Power Device
17%
Measurement
17%
Design
15%
Failure Mechanism
13%
Reduction
12%
Experimental Result
11%
Photovoltaics
11%
Semiconductor Material
11%
Switching
10%
Demonstrates
10%
Condition Monitoring
9%
Short Circuit Condition
9%
Mechanisms
9%
Experiments
9%
Power Converter
8%
High Voltage
8%
Simulation Result
8%
Thermal Model
8%
Power Loss
8%
Experimental Characterization
7%
Efficiency
7%
Voltage Drop
7%
Elements
7%
Evaluation
7%
Losses
7%
Characteristics
7%
Gate Oxide
7%
Accuracy
6%
Metal-Oxide-Semiconductor Field-Effect Transistor
6%
High Frequency
6%
Transients
6%
Bridges
6%
High Temperature
6%
Internals
6%
Resistor
6%
Events
6%
Physics
Temperature
40%
Electric Potential
39%
Model
34%
Reliability
30%
Simulation
25%
Degradation
24%
Impact
22%
Failure
21%
Utilization
20%
Circuits
17%
Oscillation
16%
Performance
15%
Heavy Ion
13%
Inductance
13%
Thermal Stress
12%
Switching
10%
Semiconductor
10%
Silicon Carbide
10%
Topology
10%
Temperature Measurement
10%
Events
9%
Variations
8%
Stability
8%
Electric Fields
8%
Technology
7%
Evaluation
6%
Transients
6%
Media
6%
Parameter
6%
Semiconductor Device
6%
Ion Irradiation
5%
High Temperature
5%
Circuit Protection
5%
Finite Element Modeling
5%
Measurement Method
5%
Amplitudes
5%
Radiation Effect
5%
Physics
5%
Standard
5%
Temperature Distribution
5%
Threshold Voltage
5%
Computer Science
Simulation Mode
30%
Simulation
25%
Application
20%
Design
15%
Inverter
11%
Experimental Result
10%
Topology
9%
Switching
9%
Roles
9%
Condition Monitoring
9%
Generation
9%
Diode
8%
Events
7%
Operating Condition
7%
Testing
6%
Case Study
6%
Accuracy
6%
Evaluation
6%
Modeling
5%
Activation
5%
Control
5%
Threshold Voltage
5%
