Analysis of the RC-IGBT snap-back phenomenon on the switching performance of parallel devices

Munaf Rahimo, Paula Diaz Reigosa, Nicola Schulz, Francesco Iannuzzo

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6 Citationer (Scopus)

Abstract

In this paper, a simulation-based study is carried out with respect to the snap-back behavior in the output IV characteristics of reverse conducting RC-IGBTs. Half-cell TCAD models of 1200V RC-IGBT structures with different snap-back voltage levels were generated by varying the peak doping concentration of the punch-through N-buffer region. The effect of the snap-back characteristics on the switching behavior when devices are operating in parallel were studied under varying device and circuit conditions. Current mis-sharing between parallel RC-IGBTs was instigated and analyzed in order to identify the root cause of such behavior during the switching transients. Results show that the RC-IGBT snap-back voltage magnitude and variations along with the circuit and operating conditions play a critical role for determining if the device operates in a stable or un-stable mode.

OriginalsprogEngelsk
TitelProceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Antal sider4
ForlagIEEE
Publikationsdatosep. 2020
Sider482-485
Artikelnummer9170125
ISBN (Elektronisk)9781728148366
DOI
StatusUdgivet - sep. 2020
Begivenhed32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, Østrig
Varighed: 13 sep. 202018 sep. 2020

Konference

Konference32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Land/OmrådeØstrig
ByVirtual, Online
Periode13/09/202018/09/2020
SponsorABB Group, et al., Infineon, Mitsubishi Electric, ON Semiconductor, Semikron - Innovation + Service
NavnProceedings of the International Symposium on Power Semiconductor Devices and ICs
Vol/bind2020-September
ISSN1063-6854

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