@inproceedings{658a7054fca247fb86956998d0aadf33,
title = "Analysis of the RC-IGBT snap-back phenomenon on the switching performance of parallel devices",
abstract = "In this paper, a simulation-based study is carried out with respect to the snap-back behavior in the output IV characteristics of reverse conducting RC-IGBTs. Half-cell TCAD models of 1200V RC-IGBT structures with different snap-back voltage levels were generated by varying the peak doping concentration of the punch-through N-buffer region. The effect of the snap-back characteristics on the switching behavior when devices are operating in parallel were studied under varying device and circuit conditions. Current mis-sharing between parallel RC-IGBTs was instigated and analyzed in order to identify the root cause of such behavior during the switching transients. Results show that the RC-IGBT snap-back voltage magnitude and variations along with the circuit and operating conditions play a critical role for determining if the device operates in a stable or un-stable mode.",
keywords = "Reverse Conducting IGBT, snap-back",
author = "Munaf Rahimo and Reigosa, {Paula Diaz} and Nicola Schulz and Francesco Iannuzzo",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 ; Conference date: 13-09-2020 Through 18-09-2020",
year = "2020",
month = sep,
doi = "10.1109/ISPSD46842.2020.9170125",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
pages = "482--485",
booktitle = "Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020",
publisher = "IEEE",
address = "United States",
}