Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes

Shivakumar D. Thammaiah, John Lundsgaard Hansen, Lis Karen Nanver

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Abstrakt

Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

OriginalsprogEngelsk
TitelChina Semiconductor Technology International Conference 2019, CSTIC 2019
RedaktørerCor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
ForlagIEEE
Publikationsdato18 mar. 2019
Artikelnummer8755633
ISBN (Trykt)978-1-5386-7444-4
ISBN (Elektronisk)978-1-5386-7443-7
DOI
StatusUdgivet - 18 mar. 2019
BegivenhedChina Semiconductor Technology International Conference - Shanghai, Kina
Varighed: 18 mar. 201919 mar. 2019

Konference

KonferenceChina Semiconductor Technology International Conference
LandKina
ByShanghai
Periode18/03/201919/03/2019

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  • Citationsformater

    Thammaiah, S. D., Hansen, J. L., & Nanver, L. K. (2019). Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes. I C. Claeys, R. Huang, H. Wu, Q. Lin, S. Liang, P. Song, Z. Guo, K. Lai, Y. Zhang, X. Qu, H-L. Lung, & W. Yu (red.), China Semiconductor Technology International Conference 2019, CSTIC 2019 [8755633] IEEE. https://doi.org/10.1109/CSTIC.2019.8755633