Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes

Shivakumar D. Thammaiah; John Lundsgaard Hansen; Lis Karen Nanver

doi:10.1109/CSTIC.2019.8755633

Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes

Shivakumar D. Thammaiah, John Lundsgaard Hansen, Lis Karen Nanver

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

2 Citationer (Scopus)

Abstract

Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

Originalsprog	Engelsk
Titel	China Semiconductor Technology International Conference 2019, CSTIC 2019
Redaktører	Cor Claeys, Ru Huang, Hanming Wu, Qinghuang Lin, Steve Liang, Peilin Song, Zhen Guo, Kafai Lai, Ying Zhang, Xinping Qu, Hsiang-Lan Lung, Wenjian Yu
Forlag	IEEE
Publikationsdato	18 mar. 2019
Artikelnummer	8755633
ISBN (Trykt)	978-1-5386-7444-4
ISBN (Elektronisk)	978-1-5386-7443-7
DOI	https://doi.org/10.1109/CSTIC.2019.8755633
Status	Udgivet - 18 mar. 2019
Begivenhed	China Semiconductor Technology International Conference - Shanghai, Kina Varighed: 18 mar. 2019 → 19 mar. 2019

Konference

Konference	China Semiconductor Technology International Conference
Land/Område	Kina
By	Shanghai
Periode	18/03/2019 → 19/03/2019

Adgang til dokumentet

10.1109/CSTIC.2019.8755633

AUB Link

Søg efter materialet i Aalborg Universitetsbiblioteks søgemaskine

Andre filer og links

http://www.scopus.com/inward/record.url?scp=85069476064&partnerID=8YFLogxK

Citationsformater

Thammaiah, S. D., Hansen, J. L., & Nanver, L. K. (2019). Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes. I C. Claeys, R. Huang, H. Wu, Q. Lin, S. Liang, P. Song, Z. Guo, K. Lai, Y. Zhang, X. Qu, H.-L. Lung, & W. Yu (red.), China Semiconductor Technology International Conference 2019, CSTIC 2019 Artikel 8755633 IEEE. https://doi.org/10.1109/CSTIC.2019.8755633

Thammaiah, Shivakumar D. ; Hansen, John Lundsgaard ; Nanver, Lis Karen. / Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes. China Semiconductor Technology International Conference 2019, CSTIC 2019. red. / Cor Claeys ; Ru Huang ; Hanming Wu ; Qinghuang Lin ; Steve Liang ; Peilin Song ; Zhen Guo ; Kafai Lai ; Ying Zhang ; Xinping Qu ; Hsiang-Lan Lung ; Wenjian Yu. IEEE, 2019.

@inproceedings{fbae9918d76e4054b7d33d228544adbb,

title = "Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes",

abstract = "Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.",

keywords = "Aluminum, Chemical vapor deposition, Diffusion barrier, Diodes, Gallium nitride, Molecular beam epitaxy, Pure boron",

author = "Thammaiah, {Shivakumar D.} and Hansen, {John Lundsgaard} and Nanver, {Lis Karen}",

year = "2019",

month = mar,

day = "18",

doi = "10.1109/CSTIC.2019.8755633",

language = "English",

isbn = "978-1-5386-7444-4",

editor = "Cor Claeys and Ru Huang and Hanming Wu and Qinghuang Lin and Steve Liang and Peilin Song and Zhen Guo and Kafai Lai and Ying Zhang and Xinping Qu and Hsiang-Lan Lung and Wenjian Yu",

booktitle = "China Semiconductor Technology International Conference 2019, CSTIC 2019",

publisher = "IEEE",

address = "United States",

note = "China Semiconductor Technology International Conference, CSTIC ; Conference date: 18-03-2019 Through 19-03-2019",

}

Thammaiah, SD, Hansen, JL & Nanver, LK 2019, Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes. i C Claeys, R Huang, H Wu, Q Lin, S Liang, P Song, Z Guo, K Lai, Y Zhang, X Qu, H-L Lung & W Yu (red), China Semiconductor Technology International Conference 2019, CSTIC 2019., 8755633, IEEE, China Semiconductor Technology International Conference, Shanghai, Kina, 18/03/2019. https://doi.org/10.1109/CSTIC.2019.8755633

Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes. / Thammaiah, Shivakumar D.; Hansen, John Lundsgaard; Nanver, Lis Karen.
China Semiconductor Technology International Conference 2019, CSTIC 2019. red. / Cor Claeys; Ru Huang; Hanming Wu; Qinghuang Lin; Steve Liang; Peilin Song; Zhen Guo; Kafai Lai; Ying Zhang; Xinping Qu; Hsiang-Lan Lung; Wenjian Yu. IEEE, 2019. 8755633.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes

AU - Thammaiah, Shivakumar D.

AU - Hansen, John Lundsgaard

AU - Nanver, Lis Karen

PY - 2019/3/18

Y1 - 2019/3/18

N2 - Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

AB - Pure boron layers, deposited by molecular beam epitaxy (MBE) on AlGaN/GaN/p-Si substrates to a thickness of ~ 7 nm, were applied as barriers to aluminum metallization. For low-temperature deposition from 250°C - 400°C, low-saturation-current diodes to the n-type GaN were fabricated that all tolerated alloying at 400°C. After alloying, the relatively high current level of the 250°C diode was reduced to that of the other low temperature diodes, whereas 700°C B deposition resulted in high-current diode characteristics. The results suggest a favorable B-to-GaN chemistry at 350°C - 400°C.

KW - Aluminum

KW - Chemical vapor deposition

KW - Diffusion barrier

KW - Diodes

KW - Gallium nitride

KW - Molecular beam epitaxy

KW - Pure boron

UR - http://www.scopus.com/inward/record.url?scp=85069476064&partnerID=8YFLogxK

U2 - 10.1109/CSTIC.2019.8755633

DO - 10.1109/CSTIC.2019.8755633

M3 - Article in proceeding

SN - 978-1-5386-7444-4

BT - China Semiconductor Technology International Conference 2019, CSTIC 2019

A2 - Claeys, Cor

A2 - Huang, Ru

A2 - Wu, Hanming

A2 - Lin, Qinghuang

A2 - Liang, Steve

A2 - Song, Peilin

A2 - Guo, Zhen

A2 - Lai, Kafai

A2 - Zhang, Ying

A2 - Qu, Xinping

A2 - Lung, Hsiang-Lan

A2 - Yu, Wenjian

PB - IEEE

T2 - China Semiconductor Technology International Conference

Y2 - 18 March 2019 through 19 March 2019

ER -

Nanometer-Thin Pure B Layers Grown by MBE as Metal Diffusion Barrier on GaN Diodes

Abstract

Konference

Adgang til dokumentet

AUB Link

Andre filer og links

Fingeraftryk

Citationsformater