@article{68a3b6943930433b99cde8980f99cdcb,
title = "Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test",
abstract = "This paper presents an online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test. The results of online monitoring of threshold voltage are coupled with both the effect of the degradation of SiC MOSFET chip and the effect of junction temperature variation caused by the degradation of the package. The proposed correction method can eliminate the influence of the junction temperature variation. And the effect of the chip degradation on the threshold voltage can be well reflected in the corrected results. The experimental results prove the effectiveness of the proposed method.",
keywords = "Power cycling test, Reliability, SiC MOSFET, Threshold voltage",
author = "Qiang Wu and Jianlong Kang and Yu Chen and Fujun Zheng and Jian Zhang and Haoze Luo and Wuhua Li and Francesco Iannuzzo",
note = "Funding Information: This work was supported in part by the National Natural Science Foundation of China under Grant 51977192 , in part by project supported by State Key Laboratory of Reliability and Intelligence of Electrical Equipment (No. EERI_KF2020007 ), Hebei University of Technology and in part by Project supported by the Ningbo science and technology innovation 2025 major project ( 20211ZDYF020218 ). Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",
year = "2022",
month = nov,
doi = "10.1016/j.microrel.2022.114702",
language = "English",
volume = "138",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",
}