Structural Characterization of MOVPE Grown AlGaN/GaN for HEMT Formation

Vladimir Popok, Thore Stig Aunsborg, Rasmus Hjelmgart Godiksen, Peter Kjær Kristensen, Raghavendra Rao Juluri, Piotr Caban, Kjeld Pedersen

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

3 Citationer (Scopus)
168 Downloads (Pure)

Abstrakt

Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is found to be largely unchanged. The attempt to vary the ammonia flow during the AlN synthesis is found not to affect the film composition and dislocation densities in the following heterostructures. An unusual phenomenon of considerable diffusion of Ga from the GaN film into the AlN buffer is found in all samples under the study. The obtained results are an important step in optimization of AlGaN/GaN growth towards the formation of good quality HEMT structures on sapphire and transfer of technology to Si substrates by providing clear understanding of the role of synthesis parameter on structure and composition of the films.
OriginalsprogEngelsk
TidsskriftReviews on Advanced Materials Science
Vol/bind57
Udgave nummer1
Sider (fra-til)72-81
Antal sider10
ISSN1605-8127
StatusUdgivet - dec. 2018

Fingeraftryk

Dyk ned i forskningsemnerne om 'Structural Characterization of MOVPE Grown AlGaN/GaN for HEMT Formation'. Sammen danner de et unikt fingeraftryk.

Citationsformater