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Abstract
This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
Original language | English |
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Journal | Microelectronics Reliability |
Volume | 88-90 |
Pages (from-to) | 577-583 |
Number of pages | 7 |
ISSN | 0026-2714 |
DOIs | |
Publication status | Published - Sept 2018 |
Event | 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Denmark Duration: 1 Oct 2018 → 5 Oct 2018 Conference number: 29th http://www.esref2018conf.org/ |
Conference
Conference | 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis |
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Number | 29th |
Location | AKKC |
Country/Territory | Denmark |
City | Aalborg |
Period | 01/10/2018 → 05/10/2018 |
Internet address |
Keywords
- Defects
- Degradation
- Failure analysis
- Focused-Ion Beam
- Gate oxide
- Gate-oxide breakdown
- Reliability
- SEM
- Short circuit
- SiC MOSFET
Fingerprint
Dive into the research topics of 'Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs'. Together they form a unique fingerprint.Projects
- 1 Finished
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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research