Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

Paula Diaz Reigosa*, Francesco Iannuzzo, Lorenzo Ceccarelli

*Kontaktforfatter

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

9 Citationer (Scopus)
8 Downloads (Pure)

Resumé

This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind88-90
Sider (fra-til)577-583
Antal sider7
ISSN0026-2714
DOI
StatusUdgivet - sep. 2018
Begivenhed29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Danmark
Varighed: 1 okt. 20185 okt. 2018
Konferencens nummer: 29th
http://www.esref2018conf.org/

Konference

Konference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Nummer29th
LokationAKKC
LandDanmark
ByAalborg
Periode01/10/201805/10/2018
Internetadresse

Fingerprint

short circuits
Leakage currents
Short circuit currents
field effect transistors
degradation
Aluminum
Degradation
Defects
leakage
Focused ion beams
Silicon
Bias voltage
Failure analysis
Metals
Cracks
aluminum
failure analysis
defects
abnormalities
metal particles

Citer dette

@inproceedings{a3c077c253bb436cbb2b5b13dcb1805f,
title = "Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs",
abstract = "This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.",
keywords = "Defects, Degradation, Failure analysis, Focused-Ion Beam, Gate oxide, Gate-oxide breakdown, Reliability, SEM, Short circuit, SiC MOSFET",
author = "Reigosa, {Paula Diaz} and Francesco Iannuzzo and Lorenzo Ceccarelli",
year = "2018",
month = "9",
doi = "10.1016/j.microrel.2018.07.144",
language = "English",
volume = "88-90",
pages = "577--583",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs. / Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo.

I: Microelectronics Reliability, Bind 88-90, 09.2018, s. 577-583.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

TY - GEN

T1 - Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Ceccarelli, Lorenzo

PY - 2018/9

Y1 - 2018/9

N2 - This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.

AB - This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.

KW - Defects

KW - Degradation

KW - Failure analysis

KW - Focused-Ion Beam

KW - Gate oxide

KW - Gate-oxide breakdown

KW - Reliability

KW - SEM

KW - Short circuit

KW - SiC MOSFET

UR - http://www.scopus.com/inward/record.url?scp=85054848468&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2018.07.144

DO - 10.1016/j.microrel.2018.07.144

M3 - Conference article in Journal

AN - SCOPUS:85054848468

VL - 88-90

SP - 577

EP - 583

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -