Abstract
This letters proposes a 0.01-40GHz fully integrated Darlington-Cascode distributed amplifier (DA) in a commercial 0.15um GaAs pHEMT process. Analysis indicates that the Darlington-Cascode gain cell (DCGC) can simultaneously enhance gain, bandwidth, and output power. The first and last stage of the DA can be equivalent to two m-derived matching sections, optimizing the return loss of the input port. An on-chip DC-fed network is employed for DC biasing of the DA. The chip area of the DA is about 1.8 mm x 1.5 mm. Measurement results demonstrate that the distributed amplifier (DA) achieves a gain of 11 dB with +/- 1.5 dB flatness, 14% - 24% power-added efficiency (PAE), and 17.2 - 19.5 dBm saturated output power.
| Originalsprog | Engelsk |
|---|---|
| Tidsskrift | I E E E Microwave and Wireless Components Letters |
| ISSN | 1531-1309 |
| Status | Accepteret/In press - 2024 |