Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

Engineering

• Degradation Model 50%
• Experimental Result 50%
• Failure Mechanism 50%
• Mechanical Stress 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%

Keyphrases

• Bond Wire Degradation 33%
• Cycling Test 100%
• Degradation Model 33%
• Thermal Failure 33%
• Wire Resistance 66%