A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage

Yi Zhang; Yichi Zhang; Zhiliang Xu; Zhongxu Wang; Hon Wong; Zhebie Lu; Antonio Caruso

doi:10.1109/APEC43580.2023.10131449

A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage

Yi Zhang, Yichi Zhang, Zhiliang Xu, Zhongxu Wang, Hon Wong, Zhebie Lu, Antonio Caruso

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

Abstract

Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts a comprehensive investigation into its accuracy, resolution, and stability towards yielding the structure information of SiC MOSFET using the source-drain voltage as the temperature sensitive electrical parameter. The whole characterization process involves two main procedures and associated key testing parameters, such as gate voltages, sensing and heating currents, etc. Their impacts on both the static and dynamic performances are also investigated with the aim of providing a guideline for conducting a reproducible thermal transient measurement for SiC MOSFETs.

Originalsprog	Engelsk
Titel	2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider	8
Forlag	IEEE
Publikationsdato	2023
Sider	378-385
Artikelnummer	10131449
ISBN (Trykt)	978-1-6654-7540-2
ISBN (Elektronisk)	978-1-6654-7539-6
DOI	https://doi.org/10.1109/APEC43580.2023.10131449
Status	Udgivet - 2023
Begivenhed	38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023 - Orlando, USA Varighed: 19 mar. 2023 → 23 mar. 2023

Konference

Konference	38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023
Land/Område	USA
By	Orlando
Periode	19/03/2023 → 23/03/2023
Sponsor	IEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)

Navn	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	1048-2334

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@inproceedings{c1c12a1610b24bb2bff9e66ea2238956,

title = "A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage",

abstract = "Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts a comprehensive investigation into its accuracy, resolution, and stability towards yielding the structure information of SiC MOSFET using the source-drain voltage as the temperature sensitive electrical parameter. The whole characterization process involves two main procedures and associated key testing parameters, such as gate voltages, sensing and heating currents, etc. Their impacts on both the static and dynamic performances are also investigated with the aim of providing a guideline for conducting a reproducible thermal transient measurement for SiC MOSFETs.",

keywords = "calibration, MOSFET, Silicon carbide, structure function, thermal characterization, thermal impedance, transient thermal measurement",

author = "Yi Zhang and Yichi Zhang and Zhiliang Xu and Zhongxu Wang and Hon Wong and Zhebie Lu and Antonio Caruso",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023 ; Conference date: 19-03-2023 Through 23-03-2023",

year = "2023",

doi = "10.1109/APEC43580.2023.10131449",

language = "English",

isbn = "978-1-6654-7540-2",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE",

pages = "378--385",

booktitle = "2023 IEEE Applied Power Electronics Conference and Exposition (APEC)",

address = "United States",

}

Zhang, Y , Zhang, Y, Xu, Z, Wang, Z, Wong, H, Lu, Z & Caruso, A 2023, A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage. i 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)., 10131449, IEEE, IEEE Applied Power Electronics Conference and Exposition (APEC), s. 378-385, 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023, Orlando, USA, 19/03/2023. https://doi.org/10.1109/APEC43580.2023.10131449

A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage. / Zhang, Yi ; Zhang, Yichi; Xu, Zhiliang et al.
2023 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2023. s. 378-385 10131449 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage

AU - Zhang, Yi

AU - Zhang, Yichi

AU - Xu, Zhiliang

AU - Wang, Zhongxu

AU - Wong, Hon

AU - Lu, Zhebie

AU - Caruso, Antonio

PY - 2023

Y1 - 2023

N2 - Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts a comprehensive investigation into its accuracy, resolution, and stability towards yielding the structure information of SiC MOSFET using the source-drain voltage as the temperature sensitive electrical parameter. The whole characterization process involves two main procedures and associated key testing parameters, such as gate voltages, sensing and heating currents, etc. Their impacts on both the static and dynamic performances are also investigated with the aim of providing a guideline for conducting a reproducible thermal transient measurement for SiC MOSFETs.

AB - Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its feasibility and limitations, this paper conducts a comprehensive investigation into its accuracy, resolution, and stability towards yielding the structure information of SiC MOSFET using the source-drain voltage as the temperature sensitive electrical parameter. The whole characterization process involves two main procedures and associated key testing parameters, such as gate voltages, sensing and heating currents, etc. Their impacts on both the static and dynamic performances are also investigated with the aim of providing a guideline for conducting a reproducible thermal transient measurement for SiC MOSFETs.

KW - calibration

KW - MOSFET

KW - Silicon carbide

KW - structure function

KW - thermal characterization

KW - thermal impedance

KW - transient thermal measurement

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M3 - Article in proceeding

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SN - 978-1-6654-7540-2

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

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BT - 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

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A Guideline for Silicon Carbide MOSFET Thermal Characterization based on Source-Drain Voltage

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