Keyphrases
Silicon Carbide (SiC) MOSFET
100%
Thermal Characterization
100%
Drain Voltage
100%
Thermal Transient Measurement
66%
Dynamic Performance
33%
Current-voltage
33%
Measurement Bases
33%
Thermal Properties
33%
Static Performance
33%
Comprehensive Investigation
33%
Testing Parameters
33%
Silicon Carbide Devices
33%
Thermo-sensitive Electrical Parameter
33%
Silicon Semiconductor
33%
Structure Information
33%
Gate Voltage
33%
Voltage Sensing
33%
Sensing Current
33%
Heating Current
33%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Thermal Characterization
100%
Drain Voltage
100%
Transients
66%
Dynamic Performance
33%
Gate Voltage
33%
Structure Information
33%
Limitations
33%
Material Science
Silicon Carbide
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Thermal Property
25%
Silicon
25%