TY - GEN
T1 - Physics-based Modeling of Packaging-related Degradation of IGBT Modules
AU - Zhang, Yichi
AU - Zhang, Yi
AU - Zhao, Shuai
AU - Bo, Yao
AU - Wang, Huai
PY - 2023/3/19
Y1 - 2023/3/19
N2 - This paper proposes an analytical model to fit degradation data of insulated gate bipolar transistor (IGBT), based on physics understandings. Different from the empirical and data-driven modeling, the revealed failure mechanism, crack propagation and metallization reconstruction leading to the smaller bond contact area and the increased resistivity respectively, have been fully considered. With the help of elaborate geometry equivalence for topside interconnection, an analytical equation is established to quantify the contact resistance, and its variation corresponds to the change of on-state voltage. Consequently, the equation build the bridge between these directly degradation-related indicators (crack, resistivity) and accessible data (on-state voltage, current). Moreover, a concise equation is formulated to analyze the crack propagation while fully considering the existing fracture mechanics theory. And another flexible equation is tailored to quantify the influence of the evolution of metallization reconstruction on resistivity. Finally, power cycling testings are conducted with different test conditions, these data verify the improved performance of the proposed model compared to the existing ones.
AB - This paper proposes an analytical model to fit degradation data of insulated gate bipolar transistor (IGBT), based on physics understandings. Different from the empirical and data-driven modeling, the revealed failure mechanism, crack propagation and metallization reconstruction leading to the smaller bond contact area and the increased resistivity respectively, have been fully considered. With the help of elaborate geometry equivalence for topside interconnection, an analytical equation is established to quantify the contact resistance, and its variation corresponds to the change of on-state voltage. Consequently, the equation build the bridge between these directly degradation-related indicators (crack, resistivity) and accessible data (on-state voltage, current). Moreover, a concise equation is formulated to analyze the crack propagation while fully considering the existing fracture mechanics theory. And another flexible equation is tailored to quantify the influence of the evolution of metallization reconstruction on resistivity. Finally, power cycling testings are conducted with different test conditions, these data verify the improved performance of the proposed model compared to the existing ones.
KW - Power cycling test
KW - degradation model
KW - failure mechanism
KW - insulated-gate bipolar transistor (IGBT)
KW - physics understanding
UR - http://www.scopus.com/inward/record.url?scp=85162253890&partnerID=8YFLogxK
U2 - 10.1109/APEC43580.2023.10131229
DO - 10.1109/APEC43580.2023.10131229
M3 - Article in proceeding
SN - 978-1-6654-7540-2
T3 - I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings
SP - 2463
EP - 2468
BT - APEC 2023 - 38th Annual IEEE Applied Power Electronics Conference and Exposition
PB - IEEE
T2 - 38th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023
Y2 - 19 March 2023 through 23 March 2023
ER -