Abstract
In this letter, a compact silicon carbide (SiC) power module featuring low stray inductance and balanced thermal resistance is proposed. To make full utilization of SiC devices in high-frequency and high-power-density applications, the laminated busbar and double-sided cooling heatsinks are directly packed as parts of the SiC power module. To balance the mechanical and thermal stress on the chips, a press-pack-like package technology is adopted. The electrical and thermal experiments of the prototype are evaluated to validate the design of low inductance and balanced thermal distribution.
Originalsprog | Engelsk |
---|---|
Artikelnummer | 8794576 |
Tidsskrift | IEEE Transactions on Power Electronics |
Vol/bind | 35 |
Udgave nummer | 3 |
Sider (fra-til) | 2237 - 2241 |
Antal sider | 5 |
ISSN | 1941-0107 |
DOI | |
Status | Udgivet - mar. 2020 |